Overcoming mask blank defects in EUV lithography

Comprehensive Defect Avoidance Framework for Mitigating EUV Mask Defects

Defect avoidance methods are likely to play a key role in overcoming the challenge of mask blank defects in EUV lithography. In this work, we propose a novel EUV mask defect avoidance method. It is the first approach that allows exploring all the degrees of freedom available for defect avoidance (pattern shift, rotation and mask floorplanning). We model the defect avoidance problem as a global,...

EUV Lithography—The Successor to Optical Lithography?

This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the...

Approach to EUV Lithography Simulation

An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

We present the potential optical performance capabilities of a next-generation extreme ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the SEMATECH Berkeley Actinic Inspection Tool (AIT), but surpassing it in every performance metric. The new synchrotron-based tool, referred to here as the SEMATECH Berkeley Actinic Imaging Tool at 0.5 NA (AIT5) will enable re...

Simulation and Compensation Methods for EUV Lithography Masks with Buried Defects

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